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Non-volatile gated variable resistor based on doped $\ce{La2CuO_{4+\delta}}$ and $\ce{SrTiO3}$ heterostructures

Published: Nov. 1, 2012

Gated variable resistors were manufactured by depositing epitaxial heterostructures of doped $\ce{La2CuO_{4+$\delta$}}$ and $\ce{SrTiO3}$ layers. Their conductance change as function of write current $I$ and write time $t$ followed a simple empirical law of the form $\Delta G/G = C I^A t^B$. This behavior is in agreement with ionic transport that accelerates exponentially with electrical field strength.

© (2012) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.
The following article appeared in J. Appl. Phys. 111, 056101 (2012) and may be found at http://dx.doi.org/10.1063/1.3691599

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